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1.47-1.49-μm InGaAsP/InP diode laser arrays

Identifieur interne : 00C150 ( Main/Repository ); précédent : 00C149; suivant : 00C151

1.47-1.49-μm InGaAsP/InP diode laser arrays

Auteurs : RBID : Pascal:03-0317788

Descripteurs français

Pascal (Inist)
- 4255P, 4260J, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Laser semiconducteur, Modèle dispositif semiconducteur, Faisceau laser, Mesure dispositif semiconducteur.

English descriptors

KwdEn :
- Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Laser beams, Semiconductor device measurement, Semiconductor device models, Semiconductor lasers.

Abstract

Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. The coolant temperature was 16°C. A two-dimensional array comprising four laser bars achieved a quasi-cw output of 110 W at a wavelength of 1.49 μm, with an 8-9-nm full width at half-maximum spectrum width. The coolant temperature was 18°C. We developed a theoretical model that describes array heating. Thermal resistances of 0.56, 0.4, and 0.34 K/W were experimentally and theoretically determined for arrays with fill factors of 10%, 20%, and 40%, respectively. © 2003 American Institute of Physics.

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Pascal:03-0317788

Le document en format XML

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<front><div type="abstract" xml:lang="en">Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. The coolant temperature was 16°C. A two-dimensional array comprising four laser bars achieved a quasi-cw output of 110 W at a wavelength of 1.49 μm, with an 8-9-nm full width at half-maximum spectrum width. The coolant temperature was 18°C. We developed a theoretical model that describes array heating. Thermal resistances of 0.56, 0.4, and 0.34 K/W were experimentally and theoretically determined for arrays with fill factors of 10%, 20%, and 40%, respectively. © 2003 American Institute of Physics.</div>
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1.47-1.49-μm InGaAsP/InP diode laser arrays

1.47-1.49-μm InGaAsP/InP diode laser arrays

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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